features: applications: ftp06n65 n-channel mosfet ftp06n65/FTA06N65 rev. a april. 2006 ? 2006 inpower semiconductor co., ltd. FTA06N65 ? adaptor ? lcd panel power ? lead free ? low on resistance ? low gate charge ? peak current vs pulse width curve ? inductive switching curves v dss r ds(on) (max.) i d 650v 1.25 ? 6.0a ordering information part number package brand ftp06n65 to-220 ftp06n65 FTA06N65 to-220f FTA06N65 absolute maximum ratings t c = 25 o c unless otherwise specified symbol parameter ftp06n65 FTA06N65 units v dss drain-to-source voltage (note *1) 650 v i d continuous drain current 6.0 6.0* a i d @ 100 o c continuous drain current figure 3 i dm pulsed drain current, v gs @ 1 0 v ( n o t e * 2 ) f i g u r e 6 p d power dissipation 125 31 w derating factor above 25 o c 1.00 0.25 w/ o c v gs gate-to-source voltage 30 v e as single pulse avalanche engergy l=16.6 mh, i d =6.2 amps 320 mj i as pulsed avalanche rating figure 8 dv/dt peak diode recovery dv/dt (note *3) 3.0 v/ns t l t pkg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10 seconds package body for 10 seconds 300 260 o c t j and t stg operating junction and storage temperature range -55 to 150 thermal resistance symbol parameter ftp06n65 FTA06N65 units test conditions r jc junction-to-case 1.0 4.0 o c /w water cooled heatsink, p d adjusted for a peak junction temperature of +150 o c . r ja junction-to-ambient 62 62 1 cubic foot chamber, free air. caution: stresses greater than those listed in the ?absolute maxi mum ratings? table may cause permanent damage to the device. *drain current limited by maximum junction temperature. d g s to-220f not to scale to-220 not to scale d g s d g s www.datasheet.net/ datasheet pdf - http://www..co.kr/
ftp06n65/FTA06N65 rev. a april. 2006 page 2 of 9 ? 2006 inpower semiconductor co., ltd. on characteristics t j =25 o c unless otherwise specified symbol parameter min. typ. m ax. units test conditions r ds(on) static drain-to-source on-resistance figure 9 and 10. -- 1.0 1.25 ? v gs =10v, i d =3.6a (note *4) v gs(th) gate threshold voltage, figure 12. 2.0 -- 4.0 v v ds = v gs , i d = 250 a gfs forward transconductance -- 7.7 -- s v ds =15v, i d =6.0a (note *4) off characteristics t j =25 o c unless otherwise specified symbol parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 650 -- -- v v gs =0v, i d =250a ? bv dss / ? t j breakdownvoltage temperature coefficient, figure 11. -- 0.7 -- v/ o c reference to 25 o c, i d =250a i dss drain-to-source leakage current -- -- 25 a v ds =650v, v gs =0v -- -- 250 v ds =520v, v gs =0v t j =125 o c i gss gate-to-source forward leakage -- -- 100 na v gs =+30v gate-to-source reverse leakage -- -- -100 v gs = -30v resistive switching characteristics essentially independent of operating temperature symbol parameter min. typ. max. units test conditions t d(on) turn-on delay time -- 22 -- ns v dd =325v t rise rise time -- 32 -- i d =6.0a t d(off) turn-off delay time -- 84 -- v gs =10v t fall fall time -- 34 -- r g =12 ? dynamic characteristics essentially independent of operating temperature symbol parameter min. typ. max. units test conditions c iss input capacitance -- 1123 -- pf v gs =0v c oss output capacitance -- 127 -- v ds =25v c rss reverse transfer capacitance -- 22 -- f=1.0mhz figure 14 q g total gate charge -- 47 -- nc v dd =325v q gs gate-to-source charge -- 7.4 -- i d=6.0a v gs =10 v q gd gate-to-drain (?miller?) charge -- 22 -- figure 15 www.datasheet.net/ datasheet pdf - http://www..co.kr/
ftp06n65/FTA06N65 rev. a april. 2006 page 3 of 9 ? 2006 inpower semiconductor co., ltd. source-drain diode characteristics t c =25 o c unless otherwise specified symbol parameter min. typ. max. units test conditions i s continuous source current (body diode) -- -- 6.0 a integral pn-diode i sm maximum pulsed current (body diode) -- -- 24.0 a in mosfet v sd diode forward voltage -- -- 1.5 v i s =6.0a, v gs =0v t rr reverse recovery time -- 468 702 ns v gs =0v q rr reverse recovery charge -- 1.9 2.9 c i f =6.0a, di/dt=100 a/s notes: *1. t j = +25 o c to +150 o c. *2. repetitive rating; pulse width lim ited by maximum junction temperature. *3. i sd = 6.0a di/dt < 100 a/s, v dd < bv dss , t j =+150 o c. *4. pulse width < 380s; duty cycle < 2%. www.datasheet.net/ datasheet pdf - http://www..co.kr/
ftp06n65/FTA06N65 rev. a april. 2006 page 4 of 9 ? 2006 inpower semiconductor co., ltd. t p , rectangular pulse duration (s) t c , case temperature ( o c ) maximum continuous drain current vs case temperature p d , power dissipation ( w ) t c , case temperature ( o c ) v ds , drain-to-source voltage ( v ) 0 i d , drain current (a) i d , drain current (a) rds(on), drain-to-source on resistance ( ?) v gs , gate-to-source voltage ( v ) figure 4. typical output characteristics typical drain-to-source on resistance vs gate voltage and drain current 3 1 0 100 75 1.000 0.100 0.010 0 maximum power dissipation vs case temperature 6789 13 25 50 75 100 125 150 25 50 75 100 125 150 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 2 notes: duty factor: d=t1/t2 peak t j =p dm x z jc x r jc +t c 20% 10% 5 % 2% single pulse 1% p dm t 1 t 2 v gs = 5.75v pulse duration = 250 s duty factor = 0.5% max t c = 25 o c figure 1. maximum effective thermal impedance, junction-to-case v gs = 4.5v v gs = 5.25v v gs = 5v v g s = 5 . 5 v 4 3 1 4 i d = 6a i d = 3a i d = 1.5a 5 z jc , thermal impedance (normalized) pulse duration = 250 s duty factor = 0.5% max t c = 25 o c 50% 0.001 16 2 0 4 25 50 14 12 10 4 2 7 6 5 125 figure 2. f i g u r e 3 . f i g u r e 5 . duty factor v g s = 1 5 v v g s = 6 . 0 v 05 10 15 20 25 30 8 6 10 11 12 14 15 www.datasheet.net/ datasheet pdf - http://www..co.kr/
ftp06n65/FTA06N65 rev. a april. 2006 page 5 of 9 ? 2006 inpower semiconductor co., ltd. t p , pulse width (s) i dm , peak current (a) 100 1 v gs , gate-to-source voltage ( v ) i d , drain-to-source current (a) t av , time in avalanche (s) i as , avalanche current (a) 10.0 1.0 0.1 i d , drain current (a) t j , junction temperature ( o c ) r ds(on) , drain-to-source resistance (normalized) 1.4 1.2 0.8 0.6 0.2 0.4 r ds(on) , drain-to-source on resistance ( ? ) 10 12 8 6 4 2 0 figure 7. typical transfer characteristics 1e-6 1e-3 10e-3 100e-3 10e-6 100e-6 -75 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 2.5 3.0 3.5 4.0 4.5 5.0 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1e+0 10e+0 25 pulse duration = 250 s duty cycle = 0.5% max v ds = 10 v starting t j = 25 o c starting t j = 150 o c pulse duration = 250 s duty cycle = 0.5% max v gs = 10v, i d = 6.0a 5.5 v gs = 10v 2.0 1.8 1.6 2.2 pulse duration = 2 s duty cycle = 0.5% max t c =25c if r= 0: t av = (li as )/(1.3bv dss -v dd ) if r 0: t av = (l/r) ln[i as r)/(1.3bv dss -v dd )+1 ] r equals total series resistance of drain circuit 10 6.0 6.5 2.6 2.4 1.0 100.0 1.0 2.0 2.2 2.4 2.6 0.8 transconductance may limit current in this region for temperatures above 25 o c derate peak current as follows: ii 25 150 t c ? 125 ---------------------- = figure 6. maximum peak current capability 1000 20 18 16 14 3.2 3.0 2.8 -55 o c +25 o c +150 o c v gs = 10v 1.2 1.4 1.6 1.8 unclamped inductive switching capability f i g u r e 8 . typical drain-to-source on resistanc e vs junction temperature typical drain-to-source on resistance vs drain current figure 9. figure 10. www.datasheet.net/ datasheet pdf - http://www..co.kr/
ftp06n65/FTA06N65 rev. a april. 2006 page 6 of 9 ? 2006 inpower semiconductor co., ltd. i sd , reverse drain current (a) c, capacitance (pf) i d , drain current (a) v gs(th) , threshold voltage (normalized) t j , junction temperature ( o c) v ds , drain-to-source voltage (v) v sd , source-to-drain voltage (v) q g , total gate charge (nc) t j , junction temperature ( o c) 1.1 1.2 1.0 0.8 40 10.0 1.0 0.1 12 8 2 0 1.10 1.05 1.00 0.95 0.90 0.9 0.6 10 -75 - 50 -25 0.0 25 50 75 100 125 150 -75 -50 -25 50 100 75 125 150 25 0.0 1 10 100 0.1 1 10 100 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 20 15 10 5 4 6 10 v gs = 0v i d = 250 a v g s = v d s i d = 2 5 0 a t j = max rated, t c = 25 o c single pulse operation in this area may be limited by r ds(on) 1 0 s 1 0 0 s 1 . 0 m s d c c oss c rss c iss v gs = 0v, f = 1mhz c iss = c gs + c gd c oss ? c ds + c gd c rss = c gd i d = 6.0a 150 o c 2 5 o c 30 0 1.15 1 0 m s 1000 1000 100 1000 10000 10 20 100.0 50 v ds , drain voltage (v) 0.7 40 35 30 v gs = 0v 1.8 80 70 60 v ds = 163v v ds = 325v v ds = 488v - 5 5 o c bv dss , drain-to-source breakdown voltage (normalized) v gs , gate-to-source voltage (v) typical breakdown voltage vs junction temperature typical threshold voltage vs junction temperature figure 11. figure 12. 45 50 typical capacitance vs drain-to-source voltage maximum forward bias safe operating area figure 13. figure 14. typical gate charge vs gate-to-source voltage typical body diode transfer characteristics figure 15. figure 16. www.datasheet.net/ datasheet pdf - http://www..co.kr/
ftp06n65/FTA06N65 rev. a april. 2006 page 7 of 9 ? 2006 inpower semiconductor co., ltd. figure 17. gate charge test circuit figure 18. gate charge waveform figure 19. resistive switching test circuit figure 20. resistive switching waveforms test circuits and waveforms v ds v gs t d(on) t d(off) t rise t fall 90% 10% v gs(th) q gs q gd v gs v ds i d q g miller region v dd v ds i d v gs 1 ma d.u.t. v dd v ds r l v gs d.u.t. r g www.datasheet.net/ datasheet pdf - http://www..co.kr/
ftp06n65/FTA06N65 rev. a april. 2006 page 8 of 9 ? 2006 inpower semiconductor co., ltd. figure 21. diode reverse recovery test circuit figure 22. diode reverse recovery waveform figure 23. unclamped inductive switching test circui t figure 24. unclamped inductive switching waveforms test circuits and waveforms i d q rr t rr bv dss v gs i as v dd t p t av 2 2 l i e as as = 0 v dd double pulse i d l di/dt adj. d.u.t. current pump v dd d.u.t. bv dss i as v gs l 50 ? series switch (mosfet) commutating diode di/dt = 100a/a www.datasheet.net/ datasheet pdf - http://www..co.kr/
ftp06n65/FTA06N65 rev. a april. 2006 page 9 of 9 ? 2006 inpower semiconductor co., ltd. disclaimers: inpower semiconductor co., ltd (ips) reserves the right to make changes without notice in order to improve reliability, function or design and to discontinue any product or service without notice. customers should obtain the latest relevant information before orders and should verify that such inform ation is current and complete. all products are sold subject to ips?s terms and conditions supplied at the time of order acknowledgement. inpower semiconductor co., ltd warrants performance of its ha rdware products to the specifications at the time of sale, testing, reliability and quality control are used to the extent ips deems necessary to suppor t this warrantee. except where agreed upon by contractual agreement, testing of all parameters of each product is no t necessarily performed. inpower semiconductor co., ltd does not assume any liability aris ing from the use of any product or circuit designs described herein. customers are responsible for thei r products and applications using ips?s components. to minimize risk, customers must provide adequate design and operating safeguards. inpower semiconductor co., ltd does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. reproduction of information in ips?s data sheets or data books is permissible only if reproduction is without modification or alteration. reproduc tion of this informat ion with any alterati on is an unfair and deceptive business practice. inpower semicondu ctor co., ltd is not responsible or liable for such altered documentation. resale of ips?s products with statements different from or beyond the parameters stated by inpower semi conductor co., ltd for that product or service voids all express or implied warrantees for the associated ips?s product or service and is unfair a nd deceptive business practice. inpower semiconductor co., ltd is not responsible or liable for any such statements. life support policy: inpower semiconductor co., ltd?s products are not authorized for use as critical components in life support devices or systems without the expressed written appr oval of inpower semiconductor co., ltd. as used herein: 1. life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to pe rform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life sup port device or system whose failure to perform can be reasonably expected to cause the failu re of the life support device or system, or to affect its safety or effectiveness. www.datasheet.net/ datasheet pdf - http://www..co.kr/
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